Theory and application of dual-transistor charge separation analysis
- Sandia National Labs, Alburquerque, NM (US)
- Allied-Signal Aerospace Co., Albuquerque, NM (US)
The authors describe a dual-transistor charge separation method to evaluate the radiation response of MOS transistors. This method requires that n- and p-channel transistors with identically processed oxides be irradiated under identical conditions at the same oxide electric fields. Combining features of single-transistor midgap and mobility methods, the authors show how one may determine threshold voltage shifts due to oxide-trapped and interface-trapped charge from standard threshold voltage and mobility measurements. These measurements can be made at currents 2-5 orders of magnitude higher than those required for midgap, subthreshold slope, and charge-pumping methods. The dual-transistor method contains no adjustable parameters, and includes an internal self-consistency check. The accuracy of the method is verified by comparison to midgap, subthreshold slope, and charge-pumping methods for several MOS processes and technologies.
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 7002155
- Report Number(s):
- CONF-890723--
- Journal Information:
- IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Vol. 36; ISSN 0018-9499; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
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46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
640302 -- Atomic
Molecular & Chemical Physics-- Atomic & Molecular Properties & Theory
74 ATOMIC AND MOLECULAR PHYSICS
CHALCOGENIDES
CURRENTS
ELECTRIC CURRENTS
HARDENING
HOLE MOBILITY
INTERFACES
IRRADIATION
LEAKAGE CURRENT
MATERIALS
MOBILITY
MOS TRANSISTORS
N-TYPE CONDUCTORS
OXIDES
OXYGEN COMPOUNDS
P-TYPE CONDUCTORS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
THRESHOLD CURRENT
TRANSISTORS
VERY HIGH TEMPERATURE