Estimating oxide-trap, interface-trap, and border-trap charge densities in metal-oxide-semiconductor transistors
- Sandia National Laboratories, Department 1332, Albuquerque, New Mexico 87185-1083 (United States)
A simple method is described that combines conventional threshold-voltage and charge-pumping measurements on [ital n]- and [ital p]-channel metal-oxide-semiconductor (MOS) transistors to estimate radiation-induced oxide-, interface-, and border-trap charge densities. In some devices, densities of border traps (near-interfacial oxide traps that exchange charge with the underlying Si) approach or exceed the density of interface traps, emphasizing the need to distinguish border-trap contributions to MOS radiation response and long-term reliability from interface-trap contributions. Estimates of border-trap charge densities obtained via this new dual-transistor technique agree well with trap densities inferred from 1/[ital f] noise measurements for transistors with varying channel length.
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 5153330
- Journal Information:
- Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 64:15; ISSN 0003-6951; ISSN APPLAB
- Country of Publication:
- United States
- Language:
- English
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