Field dependence of interface-trap buildup in polysilicon and metal gate MOS devices

Conference · Fri Nov 30 23:00:00 EST 1990 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)

DOI:https://doi.org/10.1109/23.101171· OSTI ID:5722211

Shaneyfelt, M R; Schwank, J R; Fleetwood, D M; Winokur, P S; Sexton, F W ^[1]; Hughes, K L ^[2]

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1. Sandia National Labs., Albuquerque, NM (USA)
2. L and M Technologies, Albuquerque, NM (US)

The electric field dependence of radiation-induced interface- and oxide-trap charge ({Delta}V{sub ot} and {Delta}V{sub it}) generation for polysilicon- and metal-gate MOS transistors is investigated at electric fields (E{sub ox)} from {minus} 4.2 MV/cm to + 4.7 MV/cm. If electron-hole recombination effects are taken into account, the absolute value of {Delta}V{sub ot} and the saturated value of {Delta}V{sub it} for both polysilicon- and metal-gate transistors are shown to follow an approximate E{sup {minus} 1/2} field dependence for E{sub ox} {>=} 0.4 MV/cm. An E{sup {minus} 1/2} dependence for the saturated value of {Delta}V{sub it} was al;so observed for negative-bias irradiation followed by a constant positive-bias anneal.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5722211
• Report Number(s): CONF-900723--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Vol. 37:6; ISSN 0018-9499; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CATIONS
CHALCOGENIDES
CHARGED PARTICLES
CRYSTALS
DIFFUSION
ELECTRIC FIELDS
ELECTRONS
ELEMENTARY PARTICLES
ELEMENTS
FERMIONS
HOLES
HYDROGEN IONS
HYDROGEN IONS 1 PLUS
INTERFACES
IONS
LEPTONS
MATHEMATICAL MODELS
MINERALS
MIS TRANSISTORS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
POLYCRYSTALS
RADIATION EFFECTS
RECOMBINATION
SATURATION
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICA
SILICON
SILICON COMPOUNDS
SILICON OXIDES
TRANSISTORS
TRAPPING