Field dependence of interface trap buildup in Si-gate MOS devices

Conference · Sun Dec 31 23:00:00 EST 1989

OSTI ID:7169791

Shaneyfelt, M R ^[1]; Schwank, J R; Fleetwood, D M; Winokur, P S; Sexton, F W ^[2]

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1. Allied-Signal, Inc., Albuquerque, NM (USA). Microelectronics Operation
2. Sandia National Labs., Albuquerque, NM (USA)

Radiation-induced interface traps in Si-gate MOS devices follow an E{sup {minus}1/2} electric field dependence for E {ge} +0.13 MV/cm when electron-hole recombination effects are included. A hybrid model involving hole trapping and hydrogen transport is suggested. 20 refs., 4 figs.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• Sponsoring Organization: DOE/DP
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 7169791
• Report Number(s): SAND-90-0436C; CONF-900723--10; ON: DE90007679
• Country of Publication: United States
• Language: English

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