Effect on bias on thermally stimulated current (TSC) in irradiated MOS devices

Conference · Sat Nov 30 23:00:00 EST 1991 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/23.124076· OSTI ID:5707978

Fleetwood, D M; Winokur, P S ^[1]; Reber, Jr, R A ^[2]

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1. Sandia National Labs., Albuquerque, NM (United States)
2. Diversus, Inc., Albuquerque, NM (United States)

The authors have investigated the electric-field dependence of thermally stimulated current (TSC) in irradiated MOS capacitors for TSC fields ranging from {minus}3 MV/cm to +2 MV/cm. TSC measurements at negative bias following positive-bias irradiation provide useful estimates of the net oxide-trap charge, {Delta}Q{sub ot}, if the TSC bias is large enough to overcome trapped-hole space-charge effects. Very little TSC is observed for positive-bias TSC following positive-bias irradiation. Under proper TSC bias conditions, TSC and C-V estimates of {Delta}Q{sub ot} agree well for thick, soft oxides, but differ significantly for thin, hard oxides. Differences between TSC and C-V estimates of {Delta}Q{sub ot} for thin, hard oxides are attributed to electron injection into the oxide and capture at trap sites associated with the radiation-induced trapped holes. This paper shows that TSC measurements can provide insight into the location of hole traps in MOS oxides that cannot be obtained from standard C-V tests.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5707978
• Report Number(s): CONF-910751--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 38:6; ISSN 0018-9499; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CAPACITORS
CHALCOGENIDES
ELECTRIC FIELDS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
EQUIPMENT
FILMS
HOLES
MOS TRANSISTORS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
THERMOELECTRIC PROPERTIES
THIN FILMS
TRANSISTORS
TRAPPING
TRAPS