Effect of bias on thermally stimulated current (TSC) in irradiated MOS devices
Conference
·
OSTI ID:5881885
TSC measurements at varying bias provide significant insight into the density, energy distribution, and location of MOS oxide-trap charge. Under proper'' bias conditions, TSC and C-V estimates of oxide-trap charge density agree well. 14 refs., 8 figs.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- Sponsoring Organization:
- DOE; USDOE, Washington, DC (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5881885
- Report Number(s):
- SAND-91-0421C; CONF-910751--3; ON: DE91008179
- Country of Publication:
- United States
- Language:
- English
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Effect on bias on thermally stimulated current (TSC) in irradiated MOS devices
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Thermally stimulated current measurements of SiO sub 2 defect density and energy in irradiated metal-oxide-semiconductor capacitors
Journal Article
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·
OSTI ID:7038185
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Related Subjects
42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
43 PARTICLE ACCELERATORS
430200* -- Particle Accelerators-- Beam Dynamics
Field Calculations
& Ion Optics
CURRENTS
MOS TRANSISTORS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
TEMPERATURE DEPENDENCE
TEMPERATURE EFFECTS
TRANSISTORS
TRAPS
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
43 PARTICLE ACCELERATORS
430200* -- Particle Accelerators-- Beam Dynamics
Field Calculations
& Ion Optics
CURRENTS
MOS TRANSISTORS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
TEMPERATURE DEPENDENCE
TEMPERATURE EFFECTS
TRANSISTORS
TRAPS