Correlation between preirradiation 1/F noise and postirradiation oxide-trapped charge in MOS transistors
- Physics Dept., Oberlin College, OH (US)
- Sandia National Labs., Albuquerque, NM (US)
The authors have preformed a detailed comparison of the preirradiation 1/f noise and the radiation-induced threshold voltage shifts due to oxide-trapped and interface-trapped charge, {delta}V{sub ot} and {delta}V{sub it}, for enhancement-mode, 3{mu} gate, n-channel Mos transistors taken from seven different wafers processed in the same lot. These wafers were prepared with gate oxides of widely varying radiation hardness. The authors show that the preirradiation 1/f noise levels of these devices correlate strongly with the postirradiation {delta} V {sub ot}, but not with the postirradiation {delta}V{sub it}. These results suggest that 1/f noise measurements may prove useful in characterizing and predicting the radiation response of MOS devices.
- OSTI ID:
- 7198827
- Report Number(s):
- CONF-890723--
- Journal Information:
- IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Vol. 36:6; ISSN 0018-9499; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
HARDENING
HOLE MOBILITY
INTERFACES
IRRADIATION
MOBILITY
MOS TRANSISTORS
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
TESTING
TRANSISTORS