Correlation between preirradiation channel mobility and radiation-induced interface-trap charge in metal-oxide-semiconductor transistors

Journal Article · Mon Jun 17 00:00:00 EDT 1991 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.104760· OSTI ID:5610465

Scofield, J H; Trawick, M; Klimecky, P ^[1]; Fleetwood, D M ^[2]

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1. Department of Physics, Oberlin College, Oberlin, Ohio 44074 (USA)
2. Sandia National Laboratories, Albuquerque, New Mexico 87185 (USA)

We find a strong correlation between preirradiation channel resistance and radiation-induced interface-trap charge in {ital n}-channel metal-oxide-semiconductor (MOS) transistors. While it has long been known that the postirradiation mobility of MOS transistors degrades with exposure to ionizing radiation, we believe this is the first time that differences in the postirradiation interface-trap charge have been linked to differences in preirradiation device parameters. A simple model is presented that relates the observed variations in preirradiation channel resistance to scattering from defects at the Si/SiO{sub 2} interface which may be precursors to the radiation-induced interface-trap charge.

• OSTI ID: 5610465
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 58:24; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CHALCOGENIDES
CORRELATIONS
ELEMENTS
MATHEMATICAL MODELS
MINERALS
MOS TRANSISTORS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICA
SILICON
SILICON COMPOUNDS
SILICON OXIDES
TRANSISTORS