Correlation between latent interface trap buildup and 1/{ital f} noise in metal{endash}oxide{endash}semiconductor transistors
- Sandia National Laboratories, Albuquerque, New Mexico 87185-1083 (United States)
A long-term delayed increase in the 1/{ital f} noise of {ital p}-channel metal{endash}oxide{endash}semiconductor (MOS) transistors is observed in devices that show significant latent interface-trap buildup after exposure to ionizing radiation. During positive-bias postirradiation anneal, the noise increases by more than an order of magnitude above the level observed after irradiation. The increase in noise precedes the latent buildup of interface traps by at least 4.5 days during room-temperature annealing, and by {approximately}1 h during 100{degree}C annealing. The time and temperature dependencies of the increases in noise and interface trap buildup are consistent with the thermally activated motion of protons into the near-interfacial region of the oxide, followed by increases in border trap and interface trap densities. These results suggest hydrogen-related species can significantly affect the 1/{ital f} noise of MOS devices.{copyright} {ital 1997 American Institute of Physics.}
- Research Organization:
- Sandia National Laboratory
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 467168
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 9 Vol. 70; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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