1/f Noise and radiation effects in MOS devices

Journal Article · Tue Nov 01 00:00:00 EST 1994 · IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/16.333811· OSTI ID:6795788

Fleetwood, D M; Meisenheimer, T L ^[1]; Scofield, J H ^[2]

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1. Sandia National Labs., Albuquerque, NM (United States)
2. Oberlin College, OH (United States). Physics Dept.

An extensive comparison of the 1/f noise and radiation response of MOS devices is presented. Variations in the room-temperature 1/f noise of unirradiated transistors in the linear regime of device operation correlate strongly with variations in post irradiation threshold-voltage shifts due to oxide-trap charge. A simple number fluctuation model has been developed to semi-quantitatively account for this correlation. The 1/f noise of irradiated n-channel MOS transistors increases during irradiation with increasing oxide-trap charge and decreases during post irradiation positive-bias annealing with decreasing oxide-trap charge. No such correlation is found between low-frequency 1/f noise and interface-trap charge. The noise of irradiated p-channel MOS transistors also increases during irradiation, but in contrast to the n-channel response, the p-channel transistor noise magnitude increases during positive-bias annealing with decreasing oxide-trap charge. A qualitative model involving the electrostatic charging and discharging of border traps, as well as accompanying changes in trap energy, is developed to account for this difference in n- and p-channel post irradiation annealing response. 116 refs.

• DOE Contract Number: AC04-94AL85000
• OSTI ID: 6795788
• Journal Information: IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States), Vol. 41:11; ISSN 0018-9383
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
42 ENGINEERING
MOS TRANSISTORS
NOISE
PHYSICAL RADIATION EFFECTS
CRYSTAL DEFECTS
ELECTRICAL PROPERTIES
MATHEMATICAL MODELS
TRAPS
CRYSTAL STRUCTURE
PHYSICAL PROPERTIES
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
TRANSISTORS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems
426000 - Engineering- Components
Electron Devices & Circuits- (1990-)