Evidence that similar point defects cause 1/ f noise and radiation-induced-hole trapping in metal-oxide-semiconductor transistors
Journal Article
·
· Physical Review Letters; (USA)
- Sandia National Laboratories, Division 2147, Albuquerque, New Mexico 87185-5800 (US)
- Physics Department, Oberlin College, Oberlin, Ohio 44074 (USA)
We have found that the 1/{ital f}-noise magnitude of unirradiated metal-oxide-semiconductor (MOS) transistors correlates strikingly with the radiation-induced-hole trapping efficiency of the oxide ({ital f}{sub OT}). This suggests that the previously unidentified defect that causes 1/{ital f} noise in MOS transistors is linked to the radiation-induced-hole trap, the {ital E}{prime} center,'' or to a direct precursor (likely a simple oxygen vacancy) known to be present in SiO{sub 2} before irradiation. We derive a simple equation that relates the noise and {ital f}{sub OT}.
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6963462
- Journal Information:
- Physical Review Letters; (USA), Journal Name: Physical Review Letters; (USA) Vol. 64:5; ISSN PRLTA; ISSN 0031-9007
- Country of Publication:
- United States
- Language:
- English
Similar Records
1/[ital f] noise and oxide traps in MOSFETS
Correlation between preirradiation 1/F noise and postirradiation oxide-trapped charge in MOS transistors
Estimating oxide-trap, interface-trap, and border-trap charge densities in metal-oxide-semiconductor transistors
Conference
·
Tue Aug 10 00:00:00 EDT 1993
· AIP Conference Proceedings (American Institute of Physics); (United States)
·
OSTI ID:5188847
Correlation between preirradiation 1/F noise and postirradiation oxide-trapped charge in MOS transistors
Conference
·
Thu Nov 30 23:00:00 EST 1989
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)
·
OSTI ID:7198827
Estimating oxide-trap, interface-trap, and border-trap charge densities in metal-oxide-semiconductor transistors
Journal Article
·
Mon Apr 11 00:00:00 EDT 1994
· Applied Physics Letters; (United States)
·
OSTI ID:5153330
Related Subjects
36 MATERIALS SCIENCE
360104 -- Metals & Alloys-- Physical Properties
360603* -- Materials-- Properties
ANNEALING
CHALCOGENIDES
COLOR CENTERS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DATA
DIMENSIONS
E CENTERS
EFFICIENCY
ELEMENTS
ENERGY
EQUATIONS
EXPERIMENTAL DATA
FLUCTUATIONS
HEAT TREATMENTS
HOLES
INFORMATION
JUNCTIONS
METALS
MINERALS
NONMETALS
NUMERICAL DATA
OXIDE MINERALS
OXIDES
OXYGEN
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
PRECURSOR
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SILICA
SILICON COMPOUNDS
SILICON OXIDES
THICKNESS
THRESHOLD ENERGY
TRANSISTORS
TRAPPING
VACANCIES
VARIATIONS
VERY HIGH TEMPERATURE
360104 -- Metals & Alloys-- Physical Properties
360603* -- Materials-- Properties
ANNEALING
CHALCOGENIDES
COLOR CENTERS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DATA
DIMENSIONS
E CENTERS
EFFICIENCY
ELEMENTS
ENERGY
EQUATIONS
EXPERIMENTAL DATA
FLUCTUATIONS
HEAT TREATMENTS
HOLES
INFORMATION
JUNCTIONS
METALS
MINERALS
NONMETALS
NUMERICAL DATA
OXIDE MINERALS
OXIDES
OXYGEN
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
PRECURSOR
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SILICA
SILICON COMPOUNDS
SILICON OXIDES
THICKNESS
THRESHOLD ENERGY
TRANSISTORS
TRAPPING
VACANCIES
VARIATIONS
VERY HIGH TEMPERATURE