1/[ital f] noise and oxide traps in MOSFETS

Conference · Tue Aug 10 00:00:00 EDT 1993 · AIP Conference Proceedings (American Institute of Physics); (United States)

DOI:https://doi.org/10.1063/1.44691· OSTI ID:5188847

Fleetwood, D M; Meisenheimer, T L ^[1]; Scofield, J H ^[2]

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1. Sandia National Laboratories, Dept. 1332, Albuquerque, New Mexico 87185-5800 (United States)
2. Oberlin College, Physics Department, Oberlin, Ohio 44074 (United States)

Comparative studies of the 1/[ital f] noise and radiation response of MOS transistors strongly suggest that similar point defects are responsible for their 1/[ital f] noise and radiation-induced oxide-trap charge buildup. A prime candidate for this common defect has been identified in radiation effects studies as an E[prime] (E-prime) center, which is a trivalent Si center in SiO[sub 2] associated with a simple oxygen vacancy. Thus, methods to reduce the number of vacancies in the SiO[sub 2] layer of MOS technologies can dramatically reduce the 1/[ital f] noise of irradiated or [ital unirradiated] MOS devices MOSFETs built with radiation-hardened process techniques show 1/[ital f] noise levels approaching the low levels of JFETs. 1/[ital f] noise measurements can also be used to [ital predict] the oxide-trap charge buildup in MOS electronics in radiation environments, such as those encountered in many military, nuclear reactor, high-energy accelerator, and satellite and spacecraft environments. Using radiation-hardened'' circuits and devices in these applications can dramatically improve the performance of analog MOS electronics.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5188847
• Report Number(s): CONF-930866--
• Journal Information: AIP Conference Proceedings (American Institute of Physics); (United States), Journal Name: AIP Conference Proceedings (American Institute of Physics); (United States) Vol. 285:1; ISSN 0094-243X; ISSN APCPCS
• Country of Publication: United States
• Language: English

Related Subjects

665000* -- Physics of Condensed Matter-- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CHALCOGENIDES
COLOR CENTERS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
E CENTERS
ELECTROMAGNETIC RADIATION
FIELD EFFECT TRANSISTORS
FUNCTIONS
GAMMA RADIATION
HEAT TREATMENTS
IONIZING RADIATIONS
MOS TRANSISTORS
MOSFET
NOISE
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
SILICON COMPOUNDS
SILICON OXIDES
SPECTRAL DENSITY
SPECTRAL FUNCTIONS
TRANSISTORS
TRAPS
VACANCIES