1/f noise and oxide traps in MOSFETs
- Sandia National Labs., Albuquerque, NM (United States)
- Oberlin Coll., OH (United States). Dept. of Physics
MOSFETs historically have exhibited large 1/f noise magnitudes because of carrier-defect interactions that cause the number of channel carriers and their mobility to fluctuate. Uncertainty in the type and location of defects that lead to the observed noise have made it difficult to optimize MOSFET processing to reduce the level of 1/f noise. This has limited one's options when designing devices or circuits (high-precision analog electronics, preamplifiers, etc.) for low-noise applications at frequencies below [approximately]10--100 kHz. We have performed detailed comparisons of the low-frequency 1/f noise of MOSFETs manufactured with radiation-hardened and non-radiation-hardened processing. We find that the same techniques which reduce the amount of MOSFET radiation-induced oxide-trap charge can also proportionally reduce the magnitude of the low-frequency 1/f noise of both unirradiated and irradiated devices. MOSFETs built in radiation-hardened device technologies show noise levels up to a factor of 10 or more lower than standard commercial MOSFETs of comparable dimensions, and our quietest MOSFETs show noise magnitudes that approach the low noise levels of JFETS.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- DOE; USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6537671
- Report Number(s):
- SAND-93-0037C; CONF-930866--1; ON: DE93007581
- Country of Publication:
- United States
- Language:
- English
Similar Records
1/[ital f] noise and oxide traps in MOSFETS
Effect of radiation damage on the noise performance of FET's
Related Subjects
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
CHALCOGENIDES
DEFECTS
ELECTRONIC EQUIPMENT
EQUIPMENT
FIELD EFFECT TRANSISTORS
HARDENING
MOS TRANSISTORS
MOSFET
NOISE
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
TRANSISTORS
TRAPS