Effect of radiation damage on the noise performance of FET's
Conference
·
· IEEE Trans. Nucl. Sci., v. NS-22, no. 6, pp. 2696-2702
OSTI ID:4094738
The gate noise from radiation induced defects in MOSFET's and JFET's has been studied for 24.8 MeV electron irradiations up to about 1 x 10$sup 16$ e/ cm$sup 2$. The flicker noise increase induced in JFET's has been interpreted as due to the defect generation and recombination centers induced by radiation damage within the depletion layer. Finally, it is shown that the noise performance of JFET's is well applicable for high-intensity and high-level radiation detection. (auth)
- Research Organization:
- Electrotechnical Lab., Tokyo
- NSA Number:
- NSA-33-020348
- OSTI ID:
- 4094738
- Journal Information:
- IEEE Trans. Nucl. Sci., v. NS-22, no. 6, pp. 2696-2702, Journal Name: IEEE Trans. Nucl. Sci., v. NS-22, no. 6, pp. 2696-2702; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
*FIELD EFFECT TRANSISTORS-- PHYSICAL RADIATION EFFECTS
440200* --Instrumentation--Radiation Effects on Instrument Components
Instruments
or Electronic Systems
ELECTRONS
MEV RANGE 10-100
N46300* --Instrumentation--Radiation Effects on Instrument Components
Instruments
or Electronic Systems
NOISE
PERFORMANCE
RECOMBINATION
440200* --Instrumentation--Radiation Effects on Instrument Components
Instruments
or Electronic Systems
ELECTRONS
MEV RANGE 10-100
N46300* --Instrumentation--Radiation Effects on Instrument Components
Instruments
or Electronic Systems
NOISE
PERFORMANCE
RECOMBINATION