Comparison of the low frequency noise evolution with the oxide trapped charge in irradiated n-MOS transistors

Conference · Wed Jun 01 00:00:00 EDT 1994 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:6594921

Berland, V; Touboul, A ^[1]; Crevel, P ^[2]

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1. Univ. de Bordeaux I, Talence (France)
2. MATRA-MHS, Nantes (France)

The threshold voltage shift and the low frequency channel noise of n-MOS transistors have been measured after X-ray radiation at different total doses. From the measurements performed just after the irradiation stage, any clear relation could not be established between one of the defects (known as the oxide trapped charge density [Delta]N[sub ot] or the interface-state density [Delta]N[sub it]) and the excess noise evolution, as each of these parameters increases with the dose. One of the way to distinguish which of those defects is involved in the increase of the 1/f low frequency noise, is to observe the n-MOS transistors behavior at different times after irradiation. These Post-Irradiation-Effects (PIE) were investigated after a biased storage time (at room temperature) at constant step times on a logarithmic scale (from 10 to 1,000 hours). They revealed a close correlation between the excess channel noise and the density of oxide trapped charge [Delta]N[sub ot].

• OSTI ID: 6594921
• Report Number(s): CONF-930953--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 41:3Pt1; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
COMPARATIVE EVALUATIONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DATA
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
EVALUATION
EXPERIMENTAL DATA
FAILURES
HARDENING
INFORMATION
IONIZING RADIATIONS
IRRADIATION
MOS TRANSISTORS
NUMERICAL DATA
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
RADIATIONS
SEMICONDUCTOR DEVICES
TRANSISTORS
X RADIATION