Low cost simulator for strategic radiation environments
Recent experimental works on the effect of dose rate on the total dose failure threshold of MOS devices have shown that the failure level is strategic environments may be less than the failure level measured in the laboratory by a factor of 3 to 10. This difference in dose rate response raises concerns about using laboratory sources to predict the radiation hardness in strategic environments. A solution to the problem of determining the total dose hardness of piece parts is to perform lot acceptance testing at relevant dose rates such that the time dependent effects can be directly observed. A low cost method of measuring the total dose hardness of piece parts in the laboratory at requisite dose rates is presented. 11 refs., 5 figs.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- Sponsoring Organization:
- DOE/DP
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5677533
- Report Number(s):
- SAND-89-1976C; CONF-890994--1; ON: DE90001384
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
45 MILITARY TECHNOLOGY, WEAPONRY, AND NATIONAL DEFENSE
450202 -- Explosions & Explosives-- Nuclear-- Weaponry-- (-1989)
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
EXPLOSIONS
FAILURES
HARDENING
MOS TRANSISTORS
NUCLEAR EXPLOSIONS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SIMULATION
TRANSISTORS