Using laboratory x-ray and cobalt-60 irradiations to predict CMOS device response in strategic and space environments
The postirradiation response of CMOS transistors with 30-60 nm gate oxides is investigated as a function of radiation energy, total dose, dose rate, and annealing time. Measurements of threshold voltage, oxide-trapped charge, and interface traps are reported for times ranging from 10 ms to 4 months following LINAC, Co-60, Cs-137, and 10-keV x-ray irradiations. Exposure dose rates vary by 11 orders of magnitude: from 0.05 to 6 x 10/sup 9/ rad(SiO/sub 2/)/s. To within the +- 10 percent uncertainty in the overall dosimetry, no true dose rate effects on MOS device response are observed. Further, for these devices, interface trap and oxide-trapped charge densities are found to be linear with total dose. Based on these results, and subject to future verification, preliminary recommendations are made for lot acceptance testing of hardened CMOS circuits and devices intended for use in space and strategic environments. These include an endorsement of Co-60 exposure and elevated temperature annealing for qualification of devices for use in space environments and a recommendation for the use of x-ray exposures at dose rates greater than -- 2000 rad (SiO/sub 2/)/s, in addition to Co-60 irradiations according to MIL-STD method 1019.3, for strategic applications. These tests are practical to implement, and should provide greatly improved confidence in CMOS performance in space and strategic applications over that obtained with MIL-STD 1019.3 testing.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (US)
- OSTI ID:
- 6283997
- Report Number(s):
- CONF-880730-
- Journal Information:
- IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. 35:6; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
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Instruments
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46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
654001 -- Radiation & Shielding Physics-- Radiation Physics
Shielding Calculations & Experiments
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
ANNEALING
BETA DECAY RADIOISOTOPES
BETA-MINUS DECAY RADIOISOTOPES
COBALT 60
COBALT ISOTOPES
DOSE RATES
DOSES
ELECTROMAGNETIC RADIATION
ENVIRONMENTAL EFFECTS
HARDENING
HEAT TREATMENTS
INTERFACES
INTERMEDIATE MASS NUCLEI
INTERNAL CONVERSION RADIOISOTOPES
IONIZING RADIATIONS
IRRADIATION
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
MINUTES LIVING RADIOISOTOPES
MOS TRANSISTORS
NUCLEI
ODD-ODD NUCLEI
PERFORMANCE
PHYSICAL RADIATION EFFECTS
RADIATION DOSES
RADIATION EFFECTS
RADIATION HARDENING
RADIATIONS
RADIOISOTOPES
SEMICONDUCTOR DEVICES
SPACE FLIGHT
TRANSISTORS
TRAPPING
X RADIATION
YEARS LIVING RADIOISOTOPES