Time-dependent effects on CMOS total-dose response in accelerator radiation environments
- Sandia National Labs., Albuquerque, NM (United States)
- Jet Propulsion Lab., Pasadena, CA (United States)
Time-dependent charge buildup and annealing processes cause the ionizing radiation response of CMOS devices and circuits in an accelerator radiation environment to depend strongly on the dose rate of the exposure. Oxide-trap charge annealing and interface-trap buildup in nMOS transistors can lead to positive threshold voltage shifts in a low-dose-rate radiation environment, while negative threshold-voltage shifts are commonly observed after irradiations at typical laboratory dose rates [50-300 rad(Si)/s]. Thus, devices that pass laboratory testing can fail at the low dose rates encountered in a high-energy particle-accelerator radiation environment due to positive nMOS transistor threshold-voltage shifts above preirradiation values, i.e., {open_quotes}rebound.{close_quotes} The authors discuss how this issue can be addressed in total-dose hardness assurance test methods for accelerator environments. An example is the revised US military-standard ionizing-radiation-effects test method (MIL-STD 883D, Test Method 1019.4). Finally, it is noted that the 1/f noise of radiation-hardened MOS electronics should be significantly lower than that of commercial electronics both in and outside of a radiation environment.
- Research Organization:
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 36611
- Report Number(s):
- LA-12835-C; CONF-930168-; ON: DE95001755; TRN: 95:009293
- Resource Relation:
- Conference: Simulating accelerator radiation environments workshop, Santa Fe, NM (United States), 11-15 Jan 1993; Other Information: PBD: Oct 1994; Related Information: Is Part Of Proceedings of the Workshop on Simulating Accelerator Radiation Environments; Palounek, A.P.T. [comp.]; PB: 269 p.
- Country of Publication:
- United States
- Language:
- English
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