Application of test method 1019. 4 to non-hardened power MOSFETs

Conference · Wed Jun 01 00:00:00 EDT 1994 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:6598117

Khosropour, P; Galloway, K F; Zupac, D; Schrimpf, R D ^[1]; Calvel, P ^[2]

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1. Univ. of Arizona, Tucson, AZ (United States). Electrical and Computer Engineering Dept.
2. Alcatel Espace, Toulouse (France)

The applicability of MIL-STD-883D Method 1019.4 to predicting the low-dose-rate radiation response of non-hardened power MOSFETs has been investigated. Method 1019.4 works well in providing bounds for the threshold-voltage shift. However, it is not intended to provide an estimate of the actual [Delta]V[sub T] due to low-dose-rate irradiation. A modified method is proposed which can yield more information on the threshold-voltage shift at low dose rates for power MOSFETs.

• OSTI ID: 6598117
• Report Number(s): CONF-930953--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 41:3Pt1; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
DATA
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
FIELD EFFECT TRANSISTORS
FUNCTIONS
INFORMATION
IONIZING RADIATIONS
MOS TRANSISTORS
MOSFET
NUMERICAL DATA
PERFORMANCE TESTING
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
RESPONSE FUNCTIONS
SEMICONDUCTOR DEVICES
SPACE FLIGHT
TESTING
TRANSISTORS