Characterization of an ultra-hard CMOS 64K static ram

Conference · Mon Nov 30 23:00:00 EST 1987 · IEEE Trans. Nucl. Sci.; (United States)

OSTI ID:7021165

Jenkins, W C; Martin, R L; Hughes, H L

The authors irradiated radiation-hard 64K CMOS Static RAMs in the /sup 60/Co pool at dose rates of 3 and 70 Rads (SiO/sub 2/)/sec to simulate a space radiation environment. The devices failed due to write-failure at a total gamma dose in some cases greater than 50 MRads(SiO/sub 2/). Test Transistors were also irradiated and measured.

• Research Organization: Naval Research Lab., Washington, DC (US)
• OSTI ID: 7021165
• Report Number(s): CONF-8707112-
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-34:6; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
656003* -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTROMAGNETIC RADIATION
ENVIRONMENT
GAMMA RADIATION
IONIZING RADIATIONS
IRRADIATION
MOS TRANSISTORS
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
SIMULATION
SPACE FLIGHT
TESTING
TRANSISTORS