Radiation hardened 64-bit CMOS/SOS RAM
Radiation hardening procedures have been implemented in design, analysis and fabrication of a 64-bit CMOS/SOS RAM. The resultant circuit is a moderately complex (714 transistor), dielectrically isolated integrated circuit which features high performance and high radiation tolerance. Typical electrical parameters include 12..pi.. nsec read-access time and 1..mu..watt/bit standby power dissipation. The SOS construction minimizes radiation-induced transient photocurrents while a hardened gate insulator provides immunity to total dose effects. Transient radiation upset levels exceed 3 x 10/sup 10/ rads(Si)/sec for short (less than or equal to 50 ns) pulses and ionizing dose hardness exceeds 10/sup 6/ rads(Si). A neutron fluence of 3.65 x 10/sup 14/ n/cm/sup 2/ had no effect on circuit operation beyond that expected from the ionizing radiation alone.
- Research Organization:
- Rockwell International Corp., Anaheim, CA
- OSTI ID:
- 7213066
- Journal Information:
- IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-23:6; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
DESIGN
ELECTRONIC CIRCUITS
FABRICATION
HARDENING
INTEGRATED CIRCUITS
MEMORY DEVICES
MICROELECTRONIC CIRCUITS
MOS TRANSISTORS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR STORAGE DEVICES
TESTING
TRANSIENTS
TRANSISTORS