Total dose radiation hard 0.35 {micro}m SOI CMOS technology

Journal Article · Tue Dec 01 00:00:00 EST 1998 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.736484· OSTI ID:323919

Liu, S T ^[1]; Jenkins, W C; Hughes, H L ^[2]

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1. Honeywell Solid State Electronics Center, Plymouth, MN (United States)
2. Naval Research Lab., Washington, DC (United States)

This paper presents the total dose radiation performance of 0.35 {micro}m SOI CMOS devices fabricated in a radiation hard full dose SIMOX technology. The radiation performance is characterized by transistor threshold voltage shifts, transistor array leakage currents, and 256K SRAM standby currents as a function of total dose up to 190 Mrad (SiO{sub 2}). The worst case threshold voltage shifts of front channels are less than 60 mV for PMOS transistors /at 1 Mrad(SiO{sub 2}) and less than 10 mV for NMOS transistors. No significant radiation induced leakage currents are observed in small transistor arrays to 10 Mrad(SiO{sub 2}). Standby currents of 256K SRAMs are less than the 1.5 mA specification over the total dose range of 1 Mrad(SiO{sub 2}). The results suggest high density SRAMs and ASIC fabricated in this technology will perform well in harsh radiation environment.

• OSTI ID: 323919
• Report Number(s): CONF-980705-; ISSN 0018-9499; TRN: 99:004439
• Journal Information: IEEE Transactions on Nuclear Science, Vol. 45, Issue 6Pt1; Conference: IEEE nuclear and space radiation effects conference, Newport Beach, CA (United States), 20-24 Jul 1998; Other Information: PBD: Dec 1998
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
RADIATION DOSES
RADIATION HARDENING
ELECTRICAL PROPERTIES
TRANSISTORS
SEMICONDUCTOR STORAGE DEVICES
LEAKAGE CURRENT