Radiation-tolerant, sidewall-hardened SOI/MOS transistors
Conference
·
OSTI ID:6414397
The effects of total-dose radiation have been investigated for sidewall-hardened n-channel MOS transistors fabricated in zone-melt recrystallized (ZMR) and oxygen-implanted SOI films. Subthreshold leakage currents and threshold voltage shifts remained acceptably low for the superior ZMR devices at doses greater than 1 Mrad (SiO/sub 2/).
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA); Bell Labs., Murray Hill, NJ (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6414397
- Report Number(s):
- SAND-87-0220C; CONF-870724-13; ON: DE87006716
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CURRENTS
DATA
DOSES
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
ELEMENTS
EXPERIMENTAL DATA
FIELD EFFECT TRANSISTORS
FILMS
HARDENING
INFORMATION
ION IMPLANTATION
LEAKAGE CURRENT
MELTING
MOS TRANSISTORS
MOSFET
NONMETALS
NUMERICAL DATA
OXYGEN
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION DOSES
RADIATION EFFECTS
RADIATION HARDENING
RECRYSTALLIZATION
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
THIN FILMS
TRANSISTORS
ZONE MELTING
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CURRENTS
DATA
DOSES
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
ELEMENTS
EXPERIMENTAL DATA
FIELD EFFECT TRANSISTORS
FILMS
HARDENING
INFORMATION
ION IMPLANTATION
LEAKAGE CURRENT
MELTING
MOS TRANSISTORS
MOSFET
NONMETALS
NUMERICAL DATA
OXYGEN
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION DOSES
RADIATION EFFECTS
RADIATION HARDENING
RECRYSTALLIZATION
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
THIN FILMS
TRANSISTORS
ZONE MELTING