CMOS/SOI hardening at 100 MRAD (SiO sub 2 )

Conference · Fri Nov 30 23:00:00 EST 1990 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)

OSTI ID:5884267

Leray, J L; Dupont-Nivet, E; Pere, J F; Coic, Y M; Raffaelli, M ^[1]; Auberton-Herve, A J; Bruel, M

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1. CEA, de Bruyeres-le-Chatel, BP-12, F-91680 Bruyeres-le-Chatel (FR)

Hardened CMOS/SOI 29101 microprocessor, elementary cells and transistor shave been irradiated at levels between 10 Mrad(SiO{sub 2}) and 1 Grad(SiO{sub 2}) ({sup 60}Co and 10 keV x-rays). SIMOX buried oxide behavior in the range of 100 Mrad(SiO{sub 2}) and a channel-stopped MOS/SOI structure avoiding lateral leakage current are presented. These two items indicate the feasibility of a CMOS/SOI technology operating in the hundred Mrad(SiO{sub 2}) range.

• OSTI ID: 5884267
• Report Number(s): CONF-900723--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Vol. 37:6; ISSN 0018-9499; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
BETA DECAY RADIOISOTOPES
BETA-MINUS DECAY RADIOISOTOPES
CHALCOGENIDES
COBALT 60
COBALT ISOTOPES
COMPUTERS
CURRENTS
ELECTRIC CURRENTS
ELECTRICAL EQUIPMENT
ELECTRICAL INSULATORS
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
ENERGY RANGE
EQUIPMENT
HARDENING
INTERMEDIATE MASS NUCLEI
INTERNAL CONVERSION RADIOISOTOPES
IONIZING RADIATIONS
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
KEV RANGE
KEV RANGE 01-10
LEAKAGE CURRENT
MICROELECTRONIC CIRCUITS
MICROPROCESSORS
MINERALS
MINUTES LIVING RADIOISOTOPES
NUCLEI
ODD-ODD NUCLEI
OPERATION
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
RADIATIONS
RADIOISOTOPES
SEMICONDUCTOR DEVICES
SILICA
SILICON COMPOUNDS
SILICON OXIDES
TRANSISTORS
X RADIATION
YEARS LIVING RADIOISOT