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High total dose effects on CMOS/SOI technology

Journal Article · · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
DOI:https://doi.org/10.1109/23.277521· OSTI ID:7198455
; ; ; ;  [1]; ;  [2]; ;  [3]
  1. CEA, CentER d'Etudes de Bruyeres-Le-Chatel, BP 12,91680 Bruyeres-le-Chatel (FR)
  2. CEA,DTA/LETI CENG Grenoble (FR)
  3. Thomson Militaire et Spatial, St Egreve (FR)

This paper reports that, CMOS silicon on insulator technology has shown its ability to process hardened components which remain functional after irradiation with a total dose of several tens of Megarads. New tests on elementary transistors and 29101 microprocessor have been made at doses up to 100 Mrad (SiO{sub 2}) and above. Results of irradiation at these total doses are presented for different biases, together with the post-irradiation behavior of the components. All the observations show that new parameters must be taken into account for hardness insurance at a high level of total dose.

OSTI ID:
7198455
Journal Information:
IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 39:3; ISSN 0018-9499; ISSN IETNA
Country of Publication:
United States
Language:
English

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