Total-dose characterization of a high-performance radiation-hardened 1. 0-. mu. m CMOS sea-of-gates technology

Conference · Fri Nov 30 23:00:00 EST 1990 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)

OSTI ID:5884529

Yoshii, I; Maeguchi, K; Hatano, H ^[1]; Hama, K; Takatsuka, S ^[2]

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1. Semiconductor Device Engineering Lab., Toshiba Corp. (JP)
2. Toshiba Microelectronics Corp. (JP)

The authors have developed a radiation-hardened CMOS sea-of-gates technology with 1.0-{mu}m geometry which is fully compatible with commercial technologies, Total-dose and post-irradiation effects are investigated in detail on transistors and circuits designed on a 2k-gate test chip. The data show that this technology is radiation-hardened up to a total dose of 1 Mrad(SiO{sub 2}) and may be functional at 10 Mrad(SiO{sub 2}). Moreover, using a simple analytic model for switching of CMOS circuits, it is shown that the changes in circuit performance are well correlated with those in transistor characteristics.

• OSTI ID: 5884529
• Report Number(s): CONF-900723--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Vol. 37:6; ISSN 0018-9499; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
CHALCOGENIDES
DESIGN
DOSE RATES
ELECTRONIC CIRCUITS
FABRICATION
HARDENING
INTEGRATED CIRCUITS
MATHEMATICAL MODELS
MICROELECTRONIC CIRCUITS
MINERALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PERFORMANCE
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SILICA
SILICON COMPOUNDS
SILICON OXIDES
SWITCHING CIRCUITS
TRANSISTORS
VARIATIONS