Total dose and dose rate radiation characterization of a hardened EPI-CMOS gate array

Journal Article · Fri Nov 30 23:00:00 EST 1984 · IEEE Trans. Nucl. Sci.; (United States)

DOI:https://doi.org/10.1109/TNS.1984.4333505· OSTI ID:5865245

Schroeder, J E; Bechtel, G R; Gingerich, B L

Radiation test results are presented for a 600 gate EPI-CMOS array processed for enhanced radiation hardness. The array is one of a family of standard CMOS gate arrays and is mask compatible and software compatible with the non-hardened products. Only minor performance degradation was observed for doses up to 10/sup 5/ rad-Si and all macros tested continue to function at doses greater than 10/sup 6/ rad-Si. Dose rate testing showed no latchup for doses to 10/sup 11/ rads/sec. Upset in the D flip-flop for worst case conditions occurred at approximately 5x10/sup 8/ rads/sec.

• Research Organization: Harris Semiconductor, Melbourne, Florida
• OSTI ID: 5865245
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-31:6; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
DATA
DOSE RATES
ELECTRONIC CIRCUITS
EXPERIMENTAL DATA
GATING CIRCUITS
HARDENING
INFORMATION
MOS TRANSISTORS
NUMERICAL DATA
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
TESTING
TRANSISTORS