Total dose and dose rate radiation characterization of EPI-CMOS radiation hardened memory and microprocessor devices

Journal Article · Fri Nov 30 23:00:00 EST 1984 · IEEE Trans. Nucl. Sci.; (United States)

DOI:https://doi.org/10.1109/TNS.1984.4333506· OSTI ID:5619835

Gingerich, B L; Hermsen, J M; Lee, J C; Schroeder, J E

The process, circuit discription, and total dose radiation characteristics are presented for two second generation hardened 4K EPI-CMOS RAMs and a first generation 80C85 microprocessor. Total dose radiation performance is presented to 10M rad-Si and effects of biasing and operating conditions are discussed. The dose rate sensitivity of the 4K RAMs is also presented along with single event upset (SEU) test data.

• Research Organization: Harris Semiconductor, P.O. Box 883, Melbourne, FL 32901
• OSTI ID: 5619835
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-31:6; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
COMPUTERS
DOSE RATES
ELECTRONIC CIRCUITS
HARDENING
MEMORY DEVICES
MICROELECTRONIC CIRCUITS
MICROPROCESSORS
MOS TRANSISTORS
PERFORMANCE
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR STORAGE DEVICES
SENSITIVITY
TRANSISTORS