Radiation-tolerant, sidewall-hardened SOI/MOS transistors

Conference · Tue Dec 01 04:00:00 EST 1987 · IEEE Trans. Nucl. Sci.; (United States)

OSTI ID:7248179

Tsao, S S; Fleetwood, D M; Weaver, H T; Pfeiffer, L; Celler, G K

Total dose radiation effects were measured for sidewall-hardened n-channel SOI/MOS transistors, fabricated in zone-melt-recrystallized (ZMR) and oxygen-implanted (SIMOX) SOI materials. The authors compare the radiation responses of transistors with three types of sidewall or edge configurations: island transistors with passivated edges, island transistors without passivated edges, and edgeless (enclosed-gate) transistors. Data from these three test devices allow clear separation of front-, back-, and edge-channel conduction. Passivated edge channels were hard to Co-60 doses in excess of 24 Mrad(Si). The overall hardness of the passivated-edge transistors is limited only by the radiation-induced threshold voltage shifts (about -1 V at 1.0 Mrad) of the top channel. No significant differences in total-dose response of ZMR and SIMOX devices were observed under the radiation conditions employed.

• Research Organization: Sandia National Labs., Albuquerque, NM (US)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 7248179
• Report Number(s): CONF-8707112-
• Conference Information: Journal Name: IEEE Trans. Nucl. Sci.; (United States) Journal Volume: NS-34:6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
CHALCOGENIDES
DATA ANALYSIS
DESIGN
ELECTRICAL EQUIPMENT
ELECTRICAL INSULATORS
ELECTRONIC CIRCUITS
ELEMENTS
EQUIPMENT
MATERIALS TESTING
MOS TRANSISTORS
NONMETALS
OXIDES
OXYGEN
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RECRYSTALLIZATION
SEMICONDUCTOR DEVICES
SILICON COMPOUNDS
SILICON OXIDES
TESTING
TRANSISTORS