Total-dose hardness assurance issues for SOI MOSFETs
The top-gate, back-gate, and sidewall response of SIMOX and ZMR SOI/MOS transistors to 10 keV x-ray and Co-60 irradiation is compared. For top-gate and sidewall insulators, Co-60 and 10-keV x-ray irradiations at matched dose rates lead to nearly identical response. Back-gate response, on the other hand, depends strongly on radiation energy and buried insulator thickness. Differences are observed of up to 60 percent for SIMOX (0.4 ..mu..m buried oxide), and up to 300 percent for ZMR (2.0 ..mu..m buried oxide), with Co-60 leading to increased response. Different x-ray to Co-60 correlation factors may be observed for other technologies with different sidewall and buried insulator materials and thicknesses. The authors demonstrate that it is not possible to define a generic set of worst-case radiation bias conditions for all SOI technologies. For these devices, it is shown that back-gate radiation response can be a strong function of transistor drain bias during exposure.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (US)
- OSTI ID:
- 6268222
- Report Number(s):
- CONF-880730-
- Journal Information:
- IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. 35:6; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
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73 NUCLEAR PHYSICS AND RADIATION PHYSICS
BETA DECAY RADIOISOTOPES
BETA-MINUS DECAY RADIOISOTOPES
CHALCOGENIDES
COBALT 60
COBALT ISOTOPES
ELECTRIC FIELDS
ELECTRICAL EQUIPMENT
ELECTRICAL INSULATORS
ELECTROMAGNETIC RADIATION
EQUIPMENT
HARDENING
INTERMEDIATE MASS NUCLEI
INTERNAL CONVERSION RADIOISOTOPES
IONIZING RADIATIONS
IRRADIATION
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
MINUTES LIVING RADIOISOTOPES
MOS TRANSISTORS
NUCLEI
ODD-ODD NUCLEI
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
QUALITY ASSURANCE
RADIATION EFFECTS
RADIATION HARDENING
RADIATIONS
RADIOISOTOPES
SEMICONDUCTOR DEVICES
SILICON COMPOUNDS
SILICON OXIDES
TRANSISTORS
X RADIATION
YEARS LIVING RADIOISOTOPES