Evaluation of silicon-on-insulator MOS (metal-oxide-semiconductor) transistor response to 10-keV x-ray and cobalt-60 irradiation
Conference
·
OSTI ID:7145666
This front-gate, back-gate, and sidewall response of SIMOX and ZMR MOS transistors to 10-keV x-ray and Co-60 irradiation is compared for SOI devices with and without hardened sidewall passivation. 14 refs., 4 figs.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 7145666
- Report Number(s):
- SAND-88-0250C; CONF-880730-1; ON: DE88006102
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
DOSES
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
GAMMA RADIATION
IONIZING RADIATIONS
MOS TRANSISTORS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION DOSES
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
TRANSISTORS
X RADIATION
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
DOSES
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
GAMMA RADIATION
IONIZING RADIATIONS
MOS TRANSISTORS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION DOSES
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
TRANSISTORS
X RADIATION