Strategies for lot acceptance testing using CMOS transistors and ICS

Conference · Thu Nov 30 23:00:00 EST 1989 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)

DOI:https://doi.org/10.1109/23.45394· OSTI ID:7167330

Schwank, J R; Sexton, F W; Fleetwood, D M; Rodgers, M S ^[1]; Shaneyfeit, M R ^[2]; Hughes, K L ^[3]

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1. Sandia National Labs., Albuquerque, NM (US)
2. Allied-Signal Microelectronics Operation, Albuquerque, NM (US)
3. L and M Technologies, Albuquerque, NM (US)

Direct correlation and simple overstress methods to estimate IC response in strategic and space environments from laboratory transistor and IC data are investigated. Transistors and ICs were irradiated at dose rates from 0.2 rad(SiO{sub 2})/s to 106 rad(SiO{sub 2})/s. Laboratory transistor and IC data are compared to IC data taken at high and low dose rates. Over a wide range of process conditions and hardness levels, laboratory measurements of {delta}Vot correlate well with IC leakage current at high dose rates for ICs with gate-oxide dominated response. For ICs whose response is dominated by parasitic field oxide structures, laboratory measurements of both transistor and IC leakage currents correlate well with IC hardness at high dose rates. For dose levels up to {approx equal}500 krad(SiO{sub 2}), it is shown that a simple factor-of-3 overtest can be used as a conservative estimate of radiation hardness of these technologies for strategic applications, provided that both functional and parametric testing is performed following x-ray irradiations at a dose rate of {approx equal} 2000 rad(SiO{sub 2})/s. For space environments, a laboratory irradiation to 1.5-times the required system level followed by a one week 100{degrees}C biased anneal gave conservative estimates of IC hardness.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 7167330
• Report Number(s): CONF-890723--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Vol. 36:6; ISSN 0018-9499; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CHALCOGENIDES
CURRENTS
DOSE RATES
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
ENVIRONMENTAL EFFECTS
HARDENING
INTEGRATED CIRCUITS
IONIZING RADIATIONS
IRRADIATION
LEAKAGE CURRENT
MICROELECTRONIC CIRCUITS
MOS TRANSISTORS
OXIDES
OXYGEN COMPOUNDS
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
RADIATIONS
SEMICONDUCTOR DEVICES
SILICON COMPOUNDS
SILICON OXIDES
SPACE
TESTING
TRANSISTORS
X RADIATION