Analysis of Interlayer Shorts in a 0.5 {micro}m CMOS IC Technology
- Sandia National Laboratories
Sandia is manufacturing CMOS ICs with 0.5 {micro}m LOCOS and shallow trench isolation (STI) technologies and is developing a 0.35 {micro}m SOI technology. A program based on burn-in and life tests is being used to qualify the 0.5 {micro}m technologies for delivery of high reliability ICs to customers for military and space applications. Representative ICs from baseline wafer lots are assembled using a high reliability process with multilayer hermetic, ceramic packages. These ICs are electrically tested before, during, and after burn-in and subsequent 1000 hour dynamic and static life tests. Two types of ICS are being used for this qualification, a 256K bit SRAM and a Microcontroller Core (MCC). Over 600 ICs have successfully completed these qualification tests, resulting in a failure rate estimate of less than 4 FITS for satellite applications. Recently, a group of SRAMS from a development wafer lot incorporating nonqualified processes of the 0.5 {micro}m LOCOS technology had an unusually high number of failures during the initial electrical test after packaging. The investigation of these failures is described.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 4255
- Report Number(s):
- SAND99-0600J
- Journal Information:
- Electronic Device Failure Analysis News (EDFAN), Journal Name: Electronic Device Failure Analysis News (EDFAN)
- Country of Publication:
- United States
- Language:
- English
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