Identification of Yield-Limiting Defects in a 0.5 Micron, Shallow Trench Isolation Technology
- Sandia National Laboratories
During the development and qualification of a radiation-hardened, 0.5 {micro}m shallow trench isolation technology, several yield-limiting defects were observed. The 256K (32K x 8) static-random access memories (SRAMs) used as a technology characterization vehicle had elevated power supply current during wafer probe testing. Many of the die sites were functional, but exhibited quiescent power supply current (I{sub DDQ}) in excess of 100 {micro}A, the present limit for this particular SRAM. Initial electrical analysis indicated that many of the die sites exhibited unstable I{sub DDQ} that fluctuated rapidly. We refer to this condition as ''jitter.'' The I{sub DDQ} jitter appeared to be independent of temperature and predominantly associated with the larger 256K SRAMs and not as prevalent in the 16K SRAMs (on the same reticle set). The root cause of failure was found to be two major processing problems: salicide bridging and stress-induced dislocations in the silicon islands.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 9690
- Report Number(s):
- SAND99-2014C
- Country of Publication:
- United States
- Language:
- English
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