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The Effects of Threshold Voltage and Number of Fins per Transistor on the TID Response of GF 12LP Technology

Conference ·
DOI:https://doi.org/10.2172/2999500· OSTI ID:2999500
 [1];  [1];  [1];  [1];  [2];  [2];  [3]
  1. Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
  2. Reliable MicroSystems
  3. Arizona State University
+ Show Author Affiliations
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
Other (DoD); USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
NA0003525
OSTI ID:
2999500
Report Number(s):
SAND2024-13516C; 1693171
Country of Publication:
United States
Language:
English

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