Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

Impact of 12nm FinFET Technology Variations on TID Effects: A Comparative Study of GF 12LP and 12LP+ at the Transistor Level

Conference ·
DOI:https://doi.org/10.2172/2585996· OSTI ID:2585996
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [2];  [2];  [3];  [3]
  1. Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
  2. Reliable MicroSystems
  3. Arizona State University
+ Show Author Affiliations

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
NA0003525
OSTI ID:
2585996
Report Number(s):
SAND2024-09345C; 1751164
Country of Publication:
United States
Language:
English

Similar Records

The Effects of Threshold Voltage and Number of Fins per Transistor on the TID Response of GF 12LP Technology
Conference · Tue Jan 31 23:00:00 EST 2023 · OSTI ID:2999500
The Effects of Threshold Voltage and Number of Fins per Transistor on the TID Response of GF 12LP Technology
Conference · Sat Jul 01 00:00:00 EDT 2023 · OSTI ID:2999491
The Effects of Threshold Voltage and Number of Fins per Transistor on the TID Response of GF 12LP Technology
Journal Article · Thu Jan 25 23:00:00 EST 2024 · IEEE Transactions on Nuclear Science · OSTI ID:2311246

Related Subjects