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The Effects of Threshold Voltage and Number of Fins per Transistor on the TID Response of GF 12LP Technology

Journal Article · · IEEE Transactions on Nuclear Science
 [1];  [1];  [1];  [2];  [1];  [1];  [1];  [1];  [1];  [3];  [3];  [4]
  1. Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
  2. Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Arizona State University, Tempe, AZ (United States)
  3. Reliable MicroSystems, Franklin, TN (United States)
  4. Arizona State University, Tempe, AZ (United States)
+ Show Author Affiliations

This abstract presents a comprehensive analysis of total ionizing dose (TID) response in GlobalFoundries’ 12LP 12nm bulk FinFET technology using 10keV X-rays. Devices with higher threshold voltages (VTs) demonstrated lower increases in off-state leakage current (IDS,OFF) post-irradiation, highlighting the mitigating role of high VT in TID response. Our data shows that transistors with fewer fins exhibit superior TID resistance, implying lower susceptibility to radiation effects. Our study also probed two bias conditions, "Gate-On" and "Pass-Gate," with the former displaying more severe TID degradation. Interestingly, p-type devices displayed negligible degradation, underscoring their inherent resilience to TID effects. Additionally, medium thick n-type devices echoed the fin-count-dependent TID response observed in other transistor types, further strengthening our findings. These results underscore the importance of strategic transistor selection and design for enhancing the TID resilience of future CMOS FinFET architectures, particularly critical in radiation-intense environments.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
NA0003525
OSTI ID:
2311246
Report Number(s):
SAND--2024-01010J
Journal Information:
IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 1 Vol. 71; ISSN 0018-9499
Publisher:
IEEECopyright Statement
Country of Publication:
United States
Language:
English

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Related Subjects

42 ENGINEERING
FinFET
degradation
leakage current
logic gates
number of fins per transistors
periodic structures
threshold voltage
total ionizing dose
transistors