High tolerance to total ionizing dose of {omega}-shaped gate field-effect transistors
- IMEP, ENSERG, BP 257, 38016 Grenoble Cedex 1 (France)
Ionizing radiation effects are investigated in N-channel metal-oxide-semiconductor triple-gate field-effect transistors with {omega}-shaped gate fin field-effect transistor (FinFET) architecture. The total dose response is shown to be dependent on device geometry. A wide FinFET structure behaves like a single-gate fully depleted silicon-on-insulator transistor, showing a noticeable degradation induced by ionizing radiation. By contrast, an optimized narrow FinFET shows a drastically reduced influence of ionizing radiation thanks to the efficient electrostatic control of the potential in the device provided by the {omega} gate. A narrow FinFET is shown to be naturally tolerant to a significant total dose exposure.
- OSTI ID:
- 20779358
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 88; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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