Simulation of gallium nitride vertical fin-shaped field effect transistor for use as thermal neutron detector
Through the use of a radiation detection system simulation framework, a gallium nitride vertical fin-shaped field effect transistor (FinFET) was studied for output response when utilized as a thermal neutron detector. The FinFET was assumed to had been backfilled with boron carbide, reactive to thermal neutrons. The GaN FinFET was modeled with radiation transport from MCNP, and the electronic transport from COMSOL Multiphysics. Fabricated FinFET devices (not neutron reactive) were tested to aid in the tuning of the COMSOL FinFET model. Through time-depenent studies, the drain current response pulse to simulated ionization due to single events lead to building of a database of device responses to radiation. By integrating the current pulses over time, the induced charge was calculated. Using the results of the radiation transport PTRAC file in combination with the induced charge database, an integrated charge spectrum was calculated.
- Research Organization:
- Kansas City Nuclear Security Campus (KCNSC), Kansas City, MO (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- DE-NA0002839
- OSTI ID:
- 2208812
- Report Number(s):
- NSC-614-5769
- Country of Publication:
- United States
- Language:
- English
Similar Records
The Effects of Threshold Voltage and Number of Fins per Transistor on the TID Response of GF 12LP Technology
Investigation of negative bias temperature instability dependence on fin width of silicon-on-insulator-fin-based field effect transistors