The Effects of Threshold Voltage and Number of Fins per Transistor on the TID Response of GF 12LP Technology

Conference · Sat Jul 01 04:00:00 EDT 2023

DOI:https://doi.org/10.2172/2999491· OSTI ID:2999491

Dodds, Nathaniel Anson ^[1]; Nowlin, Robert Nathaniel ^[1]; Oldiges, Philip Joseph ^[1]; Dodd, Brian Martin ^[1]; Xiong, Jenny ^[1]; Cadena, Rick Mitchell ^[1]; Wallace, Trace Michael ^[1]; Massengill, Lloyd W ^[2]; Trippe, James M ^[3]; Barnaby, Hugh J. ^[4]; Kauppila, Jeffrey S ^[2]

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1. Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
2. Reliable MicroSystems
3. Vanderbilt University
4. Arizona State University

• Research Organization: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: Other (DoD); USDOE National Nuclear Security Administration (NNSA)
• DOE Contract Number: NA0003525
• OSTI ID: 2999491
• Report Number(s): SAND2024-13513C; 1716189
• Country of Publication: United States
• Language: English