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Switching Characteristics of a 1.2 kV, 50 mΩ SiC Monolithic Bidirectional Field Effect Transistor (BiDFET) with Integrated JBS Diodes

Conference · · 2021 IEEE Applied Power Electronics Conference and Exposition (APEC)
 [1]; ; ; ; ; ; ;
  1. North Carolina State University
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—The switching performance of large area (1cm x 1cm) monolithic 1.2 kV 50 mΩ 4H-SiC bidirectional field effect transistor (BiDFET) with integrated JBS diodes is reported for the first time. The devices were fabricated in a 6-inch commercial foundry and then packaged in a custom-designed four-terminal module. The switching performance of the BiDFET has been observed to be 1.4x better than that of its internal JBSFETs. Dynamic characterization was performed at 800 V with different gate resistances, current levels and case temperatures. An increase in switching losses was observed for the BiDFET with increasing gate resistance and current level as observed for SiC power MOSFETs. The BiDFET showed a 9% reduction in total switching loss from 25 °C to 150 °C with a current of 10 A.
Research Organization:
North Carolina State University
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
DOE Contract Number:
EE0008345
OSTI ID:
2324650
Conference Information:
Journal Name: 2021 IEEE Applied Power Electronics Conference and Exposition (APEC)
Country of Publication:
United States
Language:
English

References (5)

Comparison of New Octagonal Cell Topology for 1.2 kV 4H-SiC JBSFETs with Linear and Hexagonal Topologies: Analysis and Experimental Results conference May 2019
PRESiCETM: Process Engineered for Manufacturing SiC Electronic Devices journal June 2018
Matrix converters: a technology review journal April 2002
1.2 kV, 10 A, 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Low On-State Voltage Drop journal July 2020
Monolithic 4-Terminal 1.2 kV/20 A 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Integrated JBS Diodes conference September 2020

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Related Subjects

Silicon Carbide
Monolithic
Bidirectional
FourQuadrant
Integrated
JBS Diode