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1.2 kV, 10 A, 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Low On-State Voltage Drop

Journal Article · · Materials Science Forum (Online)
 [1];  [2];  [2];  [2];  [2];  [2]
  1. North Carolina State University, Raleigh, NC (United States); North Carolina State University
  2. North Carolina State University, Raleigh, NC (United States)
+ Show Author Affiliations
Bidirectional power switches are used in matrix-or cyclo-converters and in multistage inverter circuits to facilitate high-frequency AC-to-AC conversion. A new 1.2 kV bidirectional MOSFET (BiDFET) with low on-resistance is achieved and demonstrated using two discrete SiC power MOSFET bare die chips, packaged within a four-terminal custom-designed module. Static and dynamic characterization has been carried out to inspect the on-state and switching behaviour of the BiDFET. Here, the BiDFET is shown to have a low forward voltage drop of 0.6 V at a current of 10 A, which is more than 2.5x smaller than previous Si IGBT and SiC MOSFET based bidirectional switch implementations.
Research Organization:
North Carolina State University, Raleigh, NC (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
Grant/Contract Number:
EE0008345
OSTI ID:
2324636
Journal Information:
Materials Science Forum (Online), Journal Name: Materials Science Forum (Online) Vol. 1004; ISSN 1662-9752
Publisher:
Trans Tech PublicationsCopyright Statement
Country of Publication:
United States
Language:
English

References (4)

Matrix converters: a technology review journal April 2002
Demonstration of 3 kV 4H-SiC reverse blocking MOSFET conference June 2016
Experimental and Analytical Performance Evaluation of SiC Power Devices in the Matrix Converter journal May 2014
A Single-Phase Buck–Boost Matrix Converter With Only Six Switches and Without Commutation Problem journal February 2017

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Related Subjects

36 MATERIALS SCIENCE
4H-SiC
Bi-directional switch
BiDFET
Low Voltage Drop
MOSFET
Silicon Carbide