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Design Considerations for Developing 1.2 kV 4H-SiC BiDFET-enabled Power Conversion Systems

Conference · · 2022 IEEE Energy Conversion Congress and Exposition (ECCE)
 [1];  [2];  [2];  [2];  [2];  [2];  [2]
  1. NC State University,Electrical and Computer Engineering,Raleigh,NC,USA; North Carolina State University
  2. NC State University,Electrical and Computer Engineering,Raleigh,NC,USA
+ Show Author Affiliations
Bidirectional switches are essential for cycloconverter and matrix converter applications to facilitate single-stage AC-AC conversion without intermediate energy storage elements. The 1.2 kV 4H-SiC BiDFET was developed as the first monolithic bidirectional SiC power transistor. This paper describes the design considerations taken into account while creating the BiDFET device and developing custom packages for housing the switch in discrete form for low power applications and in module form for high-power applications. The realized switches are characterized for their on-state and switching performance. The versatility of the BiDFET device is demonstrated by operating a single BiDFET H-bridge in voltage-source-inverter and current-source-inverter topologies only by varying the gate bias on the individual BiDFETs and reversing the input-output connections.
Research Organization:
North Carolina State University
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
DOE Contract Number:
EE0008345
OSTI ID:
2324742
Conference Information:
Journal Name: 2022 IEEE Energy Conversion Congress and Exposition (ECCE)
Country of Publication:
United States
Language:
English

References (12)

Third Generation PRESiCE™ Technology for Manufacturing SiC Power Devices in a 6-Inch Commercial Foundry journal January 2020
Matrix converters: a technology review journal April 2002
Optimized AC/DC Dual Active Bridge Converter using Monolithic SiC Bidirectional FET (BiDFET) for Solar PV Applications conference October 2021
Hybrid Micro-Grids Exploiting Renewables Sources, Battery Energy Storages, and Bi-Directional Converters journal November 2019
Experimental Study of High-Temperature Switching Performance of 1.2kV SiC JBSFET in Comparison with 1.2kV SiC MOSFET journal July 2019
Current-Source Inverter Integrated Motor Drives Using Dual-Gate Four-Quadrant Wide-Bandgap Power Switches journal September 2021
Demonstration of SiC-MOSFET Embedding Schottky Barrier Diode for Inactivation of Parasitic Body Diode journal May 2017
On Developing One-Chip Integration of 1.2 kV SiC MOSFET and JBS Diode (JBSFET) journal October 2017
Monolithic 4-Terminal 1.2 kV/20 A 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Integrated JBS Diodes conference September 2020
Switching Characteristics of a 1.2 kV, 50 mΩ SiC Monolithic Bidirectional Field Effect Transistor (BiDFET) with Integrated JBS Diodes conference June 2021
Thermal and Reliability Characterization of an Epoxy Resin-Based Double-Side Cooled Power Module journal July 2021
Superior Short Circuit Performance of 1.2kV SiC JBSFETs Compared to 1.2kV SiC MOSFETs journal July 2019

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Related Subjects

Bidirectional
Silicon Carbide
Half-Bridge Module
H-Bridge
BiDFET.