Power Conversion Systems Enabled by SiC BiDFET Device
- North Carolina State University, Raleigh, NC (United States); North Carolina State University
- North Carolina State University, Raleigh, NC (United States)
- Navitas Semiconductor, El Segundo, CA (United States)
- Wolfspeed, Raleigh, NC, USA
The BiDirectional Field-Effect Transistor (BiDFET) can enable circuit topologies requiring four quadrant switches, that were earlier designed using discrete combinations of MOSFETs, IGBTs, GaN HEMTs and PiN diodes. The monolithic nature of the BiDFET allows lower device count, smaller switch volume, lower inductance, and simpler packaging, and hence more reliable and commercially viable implementation in power electronics converters. Furthermore, the matrix converter topologies, now feasible using BiDFETs, can eliminate the bulky and unreliable dc link capacitors or inductors required for conventional voltage-source or current-source converters in ac-ac and ac dc applications. The 1.2 kV BiDFET has the potential to disrupt all the applications utilizing 1.2 kV switches, including electric vehicle (EV) drivetrain, bidirectional EV chargers, industrial motor drives, solid-state transformers, datacenter power supplies, elevator drives, dc microgrids, energy storage grid integration, solid-state breakers, etc.
- Research Organization:
- North Carolina State University, Raleigh, NC (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- Grant/Contract Number:
- EE0008345
- OSTI ID:
- 2324744
- Journal Information:
- IEEE Power Electronics Magazine, Journal Name: IEEE Power Electronics Magazine Journal Issue: 1 Vol. 10; ISSN 2329-9207
- Publisher:
- IEEECopyright Statement
- Country of Publication:
- United States
- Language:
- English
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