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Power Conversion Systems Enabled by SiC BiDFET Device

Journal Article · · IEEE Power Electronics Magazine
 [1];  [2];  [2];  [2];  [3];  [2];  [4];  [2];  [2]
  1. North Carolina State University, Raleigh, NC (United States); North Carolina State University
  2. North Carolina State University, Raleigh, NC (United States)
  3. Navitas Semiconductor, El Segundo, CA (United States)
  4. Wolfspeed, Raleigh, NC, USA

The BiDirectional Field-Effect Transistor (BiDFET) can enable circuit topologies requiring four quadrant switches, that were earlier designed using discrete combinations of MOSFETs, IGBTs, GaN HEMTs and PiN diodes. The monolithic nature of the BiDFET allows lower device count, smaller switch volume, lower inductance, and simpler packaging, and hence more reliable and commercially viable implementation in power electronics converters. Furthermore, the matrix converter topologies, now feasible using BiDFETs, can eliminate the bulky and unreliable dc link capacitors or inductors required for conventional voltage-source or current-source converters in ac-ac and ac dc applications. The 1.2 kV BiDFET has the potential to disrupt all the applications utilizing 1.2 kV switches, including electric vehicle (EV) drivetrain, bidirectional EV chargers, industrial motor drives, solid-state transformers, datacenter power supplies, elevator drives, dc microgrids, energy storage grid integration, solid-state breakers, etc.

Research Organization:
North Carolina State University, Raleigh, NC (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
Grant/Contract Number:
EE0008345
OSTI ID:
2324744
Journal Information:
IEEE Power Electronics Magazine, Journal Name: IEEE Power Electronics Magazine Journal Issue: 1 Vol. 10; ISSN 2329-9207
Publisher:
IEEECopyright Statement
Country of Publication:
United States
Language:
English

References (8)

A novel three-phase utility interface minimizing line current harmonics of high-power telecommunications rectifier modules journal January 1997
Monolithic 4-Terminal 1.2 kV/20 A 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Integrated JBS Diodes conference September 2020
Three-phase high power factor mains interface concepts for Electric Vehicle battery charging systems conference February 2012
Comparative evaluation of circuit topologies for 1-phase and 3-phase boost rectifiers operated with a low current distortion conference January 1994
Optimized AC/DC Dual Active Bridge Converter using Monolithic SiC Bidirectional FET (BiDFET) for Solar PV Applications conference October 2021
The auxiliary resonant commutated pole converter conference January 1990
Current-Source Inverters for Integrated Motor Drives using Wide-Bandgap Power Switches conference June 2018
The generalised transformer: A new bidirectional, sinusoidal waveform frequency converter with continuously adjustable input power factor conference June 1980

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