Monolithic 4-Terminal 1.2 kV/20 A 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Integrated JBS Diodes

Han, Kijeong; Agarwal, Aditi; Kanale, Ajit; Baliga, B. Jayant; Bhattacharya, Subhashish; Cheng, Tzu-Hsuan; Hopkins, Douglas; Amarasinghe, Voshadhi; Ransom, John

doi:10.1109/ispsd46842.2020.9170064

Monolithic 4-Terminal 1.2 kV/20 A 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Integrated JBS Diodes

Conference · Tue Aug 18 04:00:00 EDT 2020 · 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)

DOI:https://doi.org/10.1109/ispsd46842.2020.9170064· OSTI ID:2324645

^[1]; ; ; ; ; Cheng, Tzu-Hsuan; ; Amarasinghe, Voshadhi; Ransom, John

North Carolina State University

In this paper, we report successful fabrication of the first large area, monolithic, 1.2 kV 4H-SiC Bi-Directional FETs (BiDFETs) with integrated JBS diodes in a 6-inch commercial foundry for use in matrix converters. The fabricated BiDFETs support high voltage (>1.2 kV) in the first and third quadrants. They exhibit very low on-resistance of 50 mΩ in the on-state in both quadrants when the 20 V gate bias is applied to both gates, allowing conduction of 20 A with 1 V drop. Fully gate voltage controlled output characteristics are also confirmed in both quadrants.

Research Organization:: North Carolina State University

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

DOE Contract Number:: EE0008345

OSTI ID:: 2324645

Conference Information:: Journal Name: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Country of Publication:: United States

Language:: English

References (8)

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