Electrically Detected Magnetic Resonance Study of High-Field Stress Induced Si/SiO2 Interface Defects [Slides]
- Pennsylvania State Univ., University Park, PA (United States)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
We have measured the DCIV EDMR response before and after high field gate stressing in Si/Si02 MOSFETs. The g-value and orientation dependence of the stress induced EDMR response indicate that it is dominated by some combination of Pbo and Pb1 interface defects.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- NA0003525
- OSTI ID:
- 1824929
- Report Number(s):
- SAND--2020-10741C; 691196
- Country of Publication:
- United States
- Language:
- English
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