Characterization of dangling bond defects at the crystalline Si/SiOx interface in a polycrystalline Si passivating contact solar cell at room temperature with electrically detected magnetic resonance spectroscopy

Mule, Chirag M.; Mulder, David W.; Taylor, P. Craig; Nemeth, William; Theingi, San; Page, Matthew; Kaupa, Markus; Agarwal, Sumit; Stradins, Pauls

doi:10.1063/5.0267159

Characterization of dangling bond defects at the crystalline Si/SiO_x interface in a polycrystalline Si passivating contact solar cell at room temperature with electrically detected magnetic resonance spectroscopy

Journal Article · Tue Jul 01 00:00:00 EDT 2025 · APL Materials

DOI:https://doi.org/10.1063/5.0267159· OSTI ID:2574737

^[1]; ^[2]; ^[3]; ^[2]; Theingi, San ^[2]; Page, Matthew ^[2]; Kaupa, Markus ^[2]; Agarwal, Sumit ^[3]; ^[3]

Colorado School of Mines, Golden, CO (United States); National Renewable Energy Laboratory (NREL), Golden, CO (United States)
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Colorado School of Mines, Golden, CO (United States)

Monocrystalline silicon solar cells can achieve photoconversion efficiencies exceeding 26%; however, performance-limiting defects that trap carriers continue to be a challenge. In this work, we have characterized Si solar cells with tunneling SiO_x/polycrystalline-Si (poly-Si) passivating contacts (TOPCon) on As-doped Czochralski Si wafers with electrically detected magnetic resonance (EDMR) spectroscopy. We fabricated 2 × 20 mm² TOPCon-like mini solar cells with edge passivation alongside larger 4 cm² sister cells and obtained similar device characteristics. We performed EDMR spectroscopy at 300 K on two minicells with different degrees of surface passivation based on the recombination parameter, J_o, values of 40 and 310 fA/cm2. We optimized the resolution and the signal-to-noise ratio of the EDMR response of the minicells by varying the forward bias voltage and the magnetic field modulation amplitude. We detect two distinct signals with EDMR spectroscopy, an axial-like signal at g = 2.009, 2.0087, and 2.0015, and an isotropic signal at g = 2.0024, which we attribute to Si dangling bonds (P_b0 and P_b centers) and boron–oxygen related defects, respectively, at or near the c-Si/SiO_x interface. The EDMR signals were lower for the cell with a lower value of J_o, while the ratio of the two defect populations was very similar. The EDMR signal increases with forward bias but drops to zero at bias voltages >0.5 V, consistent with interface defects within or near the boron-doped emitter depletion region. Our study demonstrates a method to fabricate minicells that can be characterized with EDMR spectroscopy to detect industrially relevant defects in TOPCon cells.

View Accepted Manuscript (DOE)

Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 2574737

Report Number(s):: NREL/JA--5K00-93218

Journal Information:: APL Materials, Journal Name: APL Materials Journal Issue: 7 Vol. 13; ISSN 2166-532X

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

References (40)

Tabula Rasa for n ‐Cz silicon‐based photovoltaics LaSalvia, Vincenzo; Youssef, Amanda; Jensen, Mallory A. Progress in Photovoltaics: Research and Applications, Vol. 27, Issue 2 https://doi.org/10.1002/pip.3068	journal	August 2018
Progress in the understanding of light‐ and elevated temperature‐induced degradation in silicon solar cells: A review Chen, Daniel; Vaqueiro Contreras, Michelle; Ciesla, Alison Progress in Photovoltaics: Research and Applications, Vol. 29, Issue 11 https://doi.org/10.1002/pip.3362	journal	November 2020
Investigation on Effects of the Laser‐Enhanced Contact Optimization Process With Ag Paste in a Boron Emitter for n‐TOPCon Solar Cell Wang, Qinqin; Guo, Kaiyuan; Gu, Siwen Progress in Photovoltaics: Research and Applications, Vol. 33, Issue 2 https://doi.org/10.1002/pip.3854	journal	October 2024
Hydrogenation Mechanisms of Poly‐Si/SiO _x Passivating Contacts by Different Capping Layers Truong, Thien N.; Yan, Di; Chen, Wenhao Solar RRL, Vol. 4, Issue 3 https://doi.org/10.1002/solr.201900476	journal	November 2019
Investigating Wafer Quality in Industrial Czochralski‐Grown Gallium‐Doped p‐Type Silicon Ingots with Melt Recharging Basnet, Rabin; Sun, Chang; Le, Tien Solar RRL, Vol. 7, Issue 15 https://doi.org/10.1002/solr.202300304	journal	June 2023
UV‐Induced Degradation of Industrial PERC, TOPCon, and HJT Solar Cells: The Next Big Reliability Challenge? Thome, Fabian T.; Meßmer, Pascal; Mack, Sebastian Solar RRL, Vol. 8, Issue 23 https://doi.org/10.1002/solr.202400628	journal	November 2024
Industrial Czochralski n‐type Silicon Wafers: Gettering Effectiveness and Possible Bulk Limiting Defects Le, Tien; Cai, Yalun; Yang, Zhongshu Solar RRL, Vol. 8, Issue 6 https://doi.org/10.1002/solr.202470061	journal	March 2024
Effect of the SiO2 interlayer properties with solid-source hydrogenation on passivated contact performance and surface passivation Nemeth, Bill; Harvey, Steven P.; Li, Jian V. Energy Procedia, Vol. 124 https://doi.org/10.1016/j.egypro.2017.09.302	journal	September 2017
EasySpin, a comprehensive software package for spectral simulation and analysis in EPR Stoll, Stefan; Schweiger, Arthur Journal of Magnetic Resonance, Vol. 178, Issue 1, p. 42-55 https://doi.org/10.1016/j.jmr.2005.08.013	journal	January 2006
Effects of tunneling oxide defect density and inter-diffused carrier concentration on carrier selective contact solar cell performance: Illumination and temperature effects Park, Cheolmin; Balaji, Nagarajan; Ahn, Shihyun Solar Energy, Vol. 211 https://doi.org/10.1016/j.solener.2020.09.060	journal	November 2020
An industrially viable TOPCon structure with both ultra-thin SiOx and n+-poly-Si processed by PECVD for p-type c-Si solar cells Gao, Tian; Yang, Qing; Guo, Xueqi Solar Energy Materials and Solar Cells, Vol. 200 https://doi.org/10.1016/j.solmat.2019.109926	journal	September 2019
Hydrogen-induced degradation: Explaining the mechanism behind light- and elevated temperature-induced degradation in n- and p-type silicon Chen, Daniel; Hamer, Phillip; Kim, Moonyong Solar Energy Materials and Solar Cells, Vol. 207 https://doi.org/10.1016/j.solmat.2019.110353	journal	April 2020
Influence of SiOx film thickness on electrical performance and efficiency of TOPCon solar cells Wang, Qinqin; Wu, Wangping; Yuan, Ningyi Solar Energy Materials and Solar Cells, Vol. 208 https://doi.org/10.1016/j.solmat.2020.110423	journal	May 2020
Improved silicon oxide/polysilicon passivated contacts for high efficiency solar cells via optimized tunnel layer annealing Kaur, Gurleen; Xin, Zheng; Dutta, Tanmay Solar Energy Materials and Solar Cells, Vol. 217 https://doi.org/10.1016/j.solmat.2020.110720	journal	November 2020
Outdoor performance of a tandem InGaP/Si photovoltaic luminescent solar concentrator Phelan, Megan; Needell, David R.; Bauser, Haley Solar Energy Materials and Solar Cells, Vol. 223 https://doi.org/10.1016/j.solmat.2020.110945	journal	May 2021
Thermal activation of hydrogen for defect passivation in poly-Si based passivating contacts Polzin, Jana-Isabelle; Hammann, Benjamin; Niewelt, Tim Solar Energy Materials and Solar Cells, Vol. 230 https://doi.org/10.1016/j.solmat.2021.111267	journal	September 2021
Gettering in silicon photovoltaics: A review Liu, AnYao; Phang, Sieu Pheng; Macdonald, Daniel Solar Energy Materials and Solar Cells, Vol. 234 https://doi.org/10.1016/j.solmat.2021.111447	journal	January 2022
Investigating the degradation behaviours of n+-doped Poly-Si passivation layers: An outlook on long-term stability and accelerated recovery Chen, Daniel; Madumelu, Chukwuka; Kim, Moonyong Solar Energy Materials and Solar Cells, Vol. 236 https://doi.org/10.1016/j.solmat.2021.111491	journal	March 2022
High-voltage monocrystalline Si photovoltaic minimodules based on poly-Si/SiO passivating contacts for high-power laser power conversion Hartenstein, Matthew B.; France, Ryan M.; Nemeth, William Solar Energy Materials and Solar Cells, Vol. 255 https://doi.org/10.1016/j.solmat.2023.112286	journal	June 2023
Buyer aware: Three new failure modes in TOPCon modules absent from PERC technology Sen, Chandany; Wang, Haoran; Khan, Muhammad Umair Solar Energy Materials and Solar Cells, Vol. 272 https://doi.org/10.1016/j.solmat.2024.112877	journal	August 2024
Atomic structure of defect responsible for light-induced efficiency loss in silicon solar cells in warmer climates Meyer, Abigail R.; Taylor, P. Craig; LaSalvia, Vincenzo Cell Reports Physical Science, Vol. 4, Issue 1 https://doi.org/10.1016/j.xcrp.2022.101201	journal	January 2023
Identification of transport and recombination paths in homo- and heterojunction silicon solar cells by electrically detected magnetic resonance Müller, R.; Kanschat, P.; von Aichberger, S. Journal of Non-Crystalline Solids, Vol. 266-269 https://doi.org/10.1016/s0022-3093(99)00915-1	journal	May 2000
Crystalline Si Surface Passivation with Nafion for Bulk Defects Detection with Electron Paramagnetic Resonance Chen, Kejun; Johnston, Steve W.; Taylor, P. Craig ACS Applied Materials & Interfaces, Vol. 16, Issue 17 https://doi.org/10.1021/acsami.4c03872	journal	April 2024
Atomic structure of light-induced efficiency-degrading defects in boron-doped Czochralski silicon solar cells Meyer, Abigail R.; Taylor, P. Craig; Venuti, Michael B. Energy & Environmental Science, Vol. 14, Issue 10 https://doi.org/10.1039/d1ee01788h	journal	January 2021
Recombination in silicon thin-film solar cells: a study of electrically detected magnetic resonance Lips, K.; Boehme, C.; Fuhs, W. IEE Proceedings - Circuits, Devices and Systems, Vol. 150, Issue 4 https://doi.org/10.1049/ip-cds:20030578	journal	January 2003
Identification of a paramagnetic nitrogen dangling bond defect in nitrided silicon dioxide films on silicon Chaiyasena, I. A.; Lenahan, P. M.; Dunn, G. J. Applied Physics Letters, Vol. 58, Issue 19 https://doi.org/10.1063/1.104986	journal	May 1991
Fundamental chemical differences among P _b defects on (111) and (100) silicon Stathis, J. H.; Dori, L. Applied Physics Letters, Vol. 58, Issue 15 https://doi.org/10.1063/1.105244	journal	April 1991
Passivation and depassivation of silicon dangling bonds at the Si/SiO ₂ interface by atomic hydrogen Cartier, E.; Stathis, J. H.; Buchanan, D. A. Applied Physics Letters, Vol. 63, Issue 11 https://doi.org/10.1063/1.110758	journal	September 1993
Hot-electron induced passivation of silicon dangling bonds at the Si(111)/SiO2 interface Cartier, E.; Stathis, J. H. Applied Physics Letters, Vol. 69, Issue 1 https://doi.org/10.1063/1.118088	journal	July 1996
Conductance measurements on P b centers at the (111) Si:SiO2 interface Uren, M. J.; Stathis, J. H.; Cartier, E. Journal of Applied Physics, Vol. 80, Issue 7 https://doi.org/10.1063/1.363349	journal	October 1996
Electron spin resonance features of interface defects in thermal (100)Si/SiO2 Stesmans, A.; Afanas’ev, V. V. Journal of Applied Physics, Vol. 83, Issue 5 https://doi.org/10.1063/1.367005	journal	March 1998
Spin-dependent recombination in Czochralski silicon containing oxide precipitates Lang, V.; Murphy, J. D.; Falster, R. J. Journal of Applied Physics, Vol. 111, Issue 1 https://doi.org/10.1063/1.3675449	journal	January 2012
Compact electrically detected magnetic resonance setup Eckardt, Michael; Behrends, Jan; Münter, Detlef AIP Advances, Vol. 5, Issue 4 https://doi.org/10.1063/1.4919247	journal	April 2015
Spin dynamics of exchange-coupled nitrogen donors in heavily dopedn-type15RSiC monocrystals: Multifrequency EPR and EDMR study Solodovnyk, A.; Laguta, O.; Prokhorov, A. Physical Review B, Vol. 107, Issue 15 https://doi.org/10.1103/physrevb.107.155202	journal	April 2023
Modifications of Textured Silicon Surface Morphology and Its Effect on Poly-Si/SiO _x Contact Passivation for Silicon Solar Cells Kale, Abhijit S.; Nemeth, William; Guthrey, Harvey IEEE Journal of Photovoltaics, Vol. 9, Issue 6 https://doi.org/10.1109/jphotov.2019.2937230	journal	November 2019
Influence of Tabula Rasa on Process- and Light-Induced Degradation of Solar Cells Fabricated From Czochralski Silicon Meyer, Abigail R.; LaSalvia, Vincenzo; Nemeth, William IEEE Journal of Photovoltaics, Vol. 10, Issue 6 https://doi.org/10.1109/jphotov.2020.3020214	journal	November 2020
Self-Aligned Selective Area Front Contacts on Poly-Si/SiO _x Passivating Contact c-Si Solar Cells Chen, Kejun; Hartweg, Barry; Woodhouse, Michael IEEE Journal of Photovoltaics, Vol. 12, Issue 3 https://doi.org/10.1109/jphotov.2022.3148719	journal	May 2022
Impact of Depth-Wise Inhomogeneous Iron Distributions on the Accuracy of Lifetime-Based Interstitial Iron Measurements on Silicon Wafers Le, Tien T.; Phang, Sieu Pheng; Yang, Zhongshu IEEE Journal of Photovoltaics, Vol. 13, Issue 4 https://doi.org/10.1109/jphotov.2023.3261549	journal	July 2023
What can electron paramagnetic resonance tell us about the Si/SiO[sub 2] system? Lenahan, P. M. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 16, Issue 4 https://doi.org/10.1116/1.590301	journal	July 1998
Polycrystalline silicon passivated tunneling contacts for high efficiency silicon solar cells Nemeth, Bill; Young, David L.; Page, Matthew R. Journal of Materials Research, Vol. 31, Issue 6, p. 671-681 https://doi.org/10.1557/jmr.2016.77	journal	March 2016

Similar Records

Defect Characterization of Monocrystalline Silicon Solar Cells with Polysilicon Passivated Contact Using Electrically-Detected Magnetic Resonance (EDMR) Spectroscopy

Conference · Mon Sep 18 00:00:00 EDT 2023 · OSTI ID:2001485

Self-Aligned Selective Area Front Contacts on Poly-Si/SiO_x Passivating Contact c-Si Solar Cells

Journal Article · Mon Mar 07 19:00:00 EST 2022 · IEEE Journal of Photovoltaics · OSTI ID:1866765

Related Subjects

14 SOLAR ENERGY
PV
Si
Si/SiOx
dangling bond defect
magnetic resonance spectroscopy
passivating contact
photovoltaic
silicon
solar cell

Characterization of dangling bond defects at the crystalline Si/SiOx interface in a polycrystalline Si passivating contact solar cell at room temperature with electrically detected magnetic resonance spectroscopy

Citation Formats

References (40)

Similar Records

Related Subjects

Characterization of dangling bond defects at the crystalline Si/SiO_x interface in a polycrystalline Si passivating contact solar cell at room temperature with electrically detected magnetic resonance spectroscopy