Hole traps and trivalent silicon centers in metal/oxide/silicon devices
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journal
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May 1984 |
Identification of atomic-scale defect structure involved in the negative bias temperature instability in plasma-nitrided devices
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journal
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September 2007 |
A microscopic mechanism of dielectric breakdown in SiO 2 films: An insight from multi-scale modeling
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journal
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April 2017 |
Electrically detected magnetic resonance study of stress‐induced leakage current in thin SiO 2
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journal
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March 1996 |
Surface recombination in semiconductors
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journal
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January 1968 |
A Comparison of Positive Charge Generation in High Field Stressing and Ionizing Radiation on MOS Structures
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journal
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December 1987 |
Observations of negative bias temperature instability defect generation via on the fly electron spin resonance
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journal
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May 2010 |
Direct experimental evidence for atomic scale structural changes involved in the interface-trap transformation process
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journal
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December 2001 |
Spin-dependent transport in amorphous silicon thin-film transistors
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journal
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May 1996 |
High resolution spin dependent recombination study of hot carrier damage in short channel MOSFETs: 29Si hyperfine spectra
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journal
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August 1993 |
Total ionizing dose effects in MOS oxides and devices
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journal
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June 2003 |
A physically based predictive model of Si/SiO2 interface trap generation resulting from the presence of holes in the SiO2
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journal
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November 1997 |
Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers
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journal
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February 1981 |
Electrically detected magnetic resonance of phosphorous due to spin dependent recombination with triplet centers in γ-irradiated silicon
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journal
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December 2009 |
Electron spin resonance study of high field stressing in metal‐oxide‐silicon device oxides
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journal
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November 1986 |
Atomic-scale defects involved in the negative-bias temperature instability
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journal
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December 2007 |
Electron‐spin‐resonance study of radiation‐induced paramagnetic defects in oxides grown on (100) silicon substrates
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journal
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October 1988 |
Electron spin resonance evidence that E'/sub /spl gamma// centers can behave as switching oxide traps
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journal
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December 1995 |
Spin dependent recombination at the silicon/silicon dioxide interface
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journal
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January 1990 |
Observation of Radiation-Induced Leakage Current Defects in MOS Oxides With Multifrequency Electrically Detected Magnetic Resonance and Near-Zero-Field Magnetoresistance
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journal
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January 2020 |
Anode hole injection, defect generation, and breakdown in ultrathin silicon dioxide films
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journal
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May 2001 |
Interface Defects and Negative Bias Temperature Instabilities in 4H-SiC PMOSFETs – A Combined DCIV/SDR Study
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journal
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January 2013 |
Oxygen vacancy model for the E1′ center in SiO2
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journal
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February 1974 |
A model of hole trapping in SiO2 films on silicon
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journal
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May 1997 |
EasySpin, a comprehensive software package for spectral simulation and analysis in EPR
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journal
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January 2006 |
Correlation of Fixed Positive Charge and E′γ Centers as Measured via Electron Injection and Electron Paramagnetic Resonance Techniques
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journal
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July 1991 |
Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance II
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journal
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January 1972 |
P b 1 interface defect in thermal ( 100 ) S i / S i O 2 : 29 Si hyperfine interaction
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journal
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December 1998 |
Study of SILC and interface trap generation due to high field stressing and its operating temperature dependence in 2.2 nm gate dielectrics
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journal
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April 2002 |
Predicting radiation response from process parameters: Verification of a physically based predictive model
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journal
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December 1999 |
A comprehensive physically based predictive model for radiation damage in MOS systems
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journal
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December 1998 |
A Multifield and Frequency Electrically Detected Magnetic Resonance Study of Atomic-Scale Defects in Gamma Irradiated Modern MOS Integrated Circuitry
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journal
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January 2019 |
Stress-induced current in thin silicon dioxide films
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conference
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January 1992 |