Probing the Atomic Scale Mechanisms of Time Dependent Dielectric Breakdown in Si/SiO 2 MOSFETs (June 2022)

Sharov, Fedor V.; Moxim, Stephen J.; Haase, Gaddi S.; Hughart, David R.; McKay, Colin G.; Lenahan, Patrick M.

doi:10.1109/tdmr.2022.3186232

Title: Probing the Atomic Scale Mechanisms of Time Dependent Dielectric Breakdown in Si/SiO 2 MOSFETs (June 2022)

Journal Article · Sat Jan 01 00:00:00 EST 2022 · IEEE Transactions on Device and Materials Reliability

DOI:https://doi.org/10.1109/tdmr.2022.3186232· OSTI ID:1877129

^[1];

^[1]; Haase, Gaddi S. ^[2]; Hughart, David R. ^[2]; McKay, Colin G. ^[2]; Lenahan, Patrick M. ^[1]

Pennsylvania State Univ., University Park, PA (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Here we report on an atomic-scale study of trap generation in the initial/intermediate stages of time-dependent dielectric breakdown (TDDB) in high-field stressed (100) Si/SiO2 MOSFETs using two powerful analytical techniques: electrically detected magnetic resonance (EDMR) and near-zero-field magnetoresistance (NZFMR). We find the dominant EDMR-sensitive traps generated throughout the majority of the TDDB process to be silicon dangling bonds at the (100) Si/SiO2 interface (Pb0 and Pb1 centers) for both the spin-dependent recombination (SDR) and trap-assisted tunneling (SDTAT) processes. We find this generation to be linked to both changes in the calculated interface state densities as well as changes in the NZFMR spectra for recombination events at the interface, indicating a redistribution of mobile magnetic nuclei which we conclude could only be due to the redistribution of hydrogen at the interface. Additionally, we observe the generation of traps known as E’ centers in EDMR measurements at lower experimental temperatures via SDR measurements at the interface. Our work strongly suggests the involvement of a rate-limiting step in the tunneling process between the silicon dangling bonds generated at the interface and the ones generated throughout the oxide.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); Defense Threat Reduction Agency (DTRA)

Grant/Contract Number:: NA0003525; HDTRA1-18-0012

OSTI ID:: 1877129

Report Number(s):: SAND2022-8393J; 707527

Journal Information:: IEEE Transactions on Device and Materials Reliability, Vol. 22, Issue 3; ISSN 1530-4388

Publisher:: IEEECopyright Statement

Country of Publication:: United States

Language:: English

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36 MATERIALS SCIENCE
EDMR
electrical stressing
interface traps
MOSFETS
silicon dioxide
SDR
SDTAT
tunneling
magnetic resonance
electron traps
silicon
logic gates
voltage measurement

Title: Probing the Atomic Scale Mechanisms of Time Dependent Dielectric Breakdown in Si/SiO 2 MOSFETs (June 2022)

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