We demonstrate the ability of a relatively new analytical technique, near-zero-field magnetoresistance (NZFMR), to track atomic-scale phenomena involved in the high-field stressing damage of fully processed Si metal-oxide-semiconductor field-effect transistors. We show that the technique is sensitive to both the Pb0 and Pb1 dangling bond centers and that the presence of both centers can be inferred through NZFMR via hyperfine interactions with the central 29Si atoms of the dangling bonds. The NZFMR results also provide evidence for the redistribution of mobile hydrogen atoms at the Si/SiO2 interface and also a potential change in the average dipolar coupling constant between electrons in neighboring defects. This work shows that NZFMR offers significant analytical power for studying technologically relevant semiconductor device reliability problems and has advantages in experimental simplicity over comparable techniques.
Moxim, Stephen J., Sharov, Fedor V., Hughart, David R., Haase, Gaddi S., McKay, Colin G., Frantz, Elias B., & Lenhan, Patrick M. (2022). Near-zero-field magnetoresistance measurements: A simple method to track atomic-scale defects involved in metal-oxide-semiconductor device reliability. Review of Scientific Instruments, 93(11). https://doi.org/10.1063/5.0080960
Moxim, Stephen J., Sharov, Fedor V., Hughart, David R., et al., "Near-zero-field magnetoresistance measurements: A simple method to track atomic-scale defects involved in metal-oxide-semiconductor device reliability," Review of Scientific Instruments 93, no. 11 (2022), https://doi.org/10.1063/5.0080960
@article{osti_1896538,
author = {Moxim, Stephen J. and Sharov, Fedor V. and Hughart, David R. and Haase, Gaddi S. and McKay, Colin G. and Frantz, Elias B. and Lenhan, Patrick M.},
title = {Near-zero-field magnetoresistance measurements: A simple method to track atomic-scale defects involved in metal-oxide-semiconductor device reliability},
annote = {We demonstrate the ability of a relatively new analytical technique, near-zero-field magnetoresistance (NZFMR), to track atomic-scale phenomena involved in the high-field stressing damage of fully processed Si metal-oxide-semiconductor field-effect transistors. We show that the technique is sensitive to both the Pb0 and Pb1 dangling bond centers and that the presence of both centers can be inferred through NZFMR via hyperfine interactions with the central 29Si atoms of the dangling bonds. The NZFMR results also provide evidence for the redistribution of mobile hydrogen atoms at the Si/SiO2 interface and also a potential change in the average dipolar coupling constant between electrons in neighboring defects. This work shows that NZFMR offers significant analytical power for studying technologically relevant semiconductor device reliability problems and has advantages in experimental simplicity over comparable techniques.},
doi = {10.1063/5.0080960},
url = {https://www.osti.gov/biblio/1896538},
journal = {Review of Scientific Instruments},
issn = {ISSN 0034-6748},
number = {11},
volume = {93},
place = {United States},
publisher = {American Institute of Physics},
year = {2022},
month = {11}}